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CM20TF-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM20TF-12H
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM20TF-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
02468
10
0
VGE = 20V
15
12
11
8
7
Tj = 25
oC
10
9
40
30
20
10
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
40
30
20
10
0
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
010
20
30
40
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 8A
IC = 40A
IC = 20A
0
0.8
1.6
2.4
3.2
4.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
100
101
102
102
101
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 31Ω
Tj = 125°C
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
100
101
102
102
101
trr
Irr
di/dt = –40A/
µsec
Tj = 25°C
101
100
10-1
GATE CHARGE, QG, (nC)
GATE CHARGE, VGE
20
0
20
40
60
80
100
16
12
8
4
0
VCC = 200V
VCC = 300V
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
101
10-2
VGE = 0V
101
Cies
Coes
Cres
10-1
100
IC = 20A
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE


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