Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

CM20TF-12H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM20TF-12H
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
Download  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo 

CM20TF-12H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
Sep.1998
MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM20TF-12H
Units
Junction Temperature
Tj
–40 to +150
°C
Storage Temperature
Tstg
–40 to +125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (TC = 25°C)
IC
20
Amperes
Peak Collector Current
ICM
40*
Amperes
Emitter Current** (TC = 25°C)
IE
20
Amperes
Peak Emitter Current**
IEM
40*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Pc
125
Watts
Mounting Torque, M5 Mounting
1.47 ~ 1.96
N · m
Weight
150
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 2mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 20A, VGE = 15V
2.1
2.8**
Volts
IC = 20A, VGE = 15V, Tj = 150°C
2.15
Volts
Total Gate Charge
QG
VCC = 300V, IC = 20A, VGE = 15V
60
nC
Emitter-Collector Voltage
VEC
IE = 20A, VGE = 0V
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
2.0
nF
Output Capacitance
Coes
VGE = 0V, VCE = 10V
0.7
nF
Reverse Transfer Capacitance
Cres
0.4
nF
Resistive
Turn-on Delay Time
td(on)
120
ns
Load
Rise Time
tr
VCC = 300V, IC = 20A,
300
ns
Switching
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 31Ω
200
ns
Times
Fall Time
tf
300
ns
Diode Reverse Recovery Time
trr
IE = 20A, diE/dt = –40A/µs
110
ns
Diode Reverse Recovery Charge
Qrr
IE = 20A, diE/dt = –40A/µs
0.05
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
1.00
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
3.50
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
0.092
°C/W


Html Pages

1  2  3  4 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
CM15MD-12HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
CM20MD3-12HMEDIUM POWER SWITCHING USE FLAT-BASE TYPE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
CM50TF-12HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 Mitsubishi Electric Semiconductor
QM30TX-HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
QM50HA-HBMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
CM15MD-24HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
CM20TF-24HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 Mitsubishi Electric Semiconductor
CM50TF-24HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 Mitsubishi Electric Semiconductor
QM30CY-HMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor
QM30TX-HBMEDIUM POWER SWITCHING USE INSULATED TYPE 1 2 3 4 5 Mitsubishi Electric Semiconductor

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn