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M6MGD137W34DWG Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. M6MGD137W34DWG
Description  134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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M6MGD137W34DWG Datasheet(HTML) 1 Page - Renesas Technology Corp

   
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Rev.1.2_48a_bezc
1
M6MGD137W34DWG
RENESAS
CONFIDENTIAL
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Renesas LSIs
The M6MGD137W34DWG is a Stacked Chip Scale Package
(S-CSP) that contents 128M-bit Flash memory and 32M-bit
Mobile RAM in a 72-pin Stacked CSP for lead free use.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
The cells are automatically refreshed and the refresh control is
not required for system. The device also has the partial block
refresh scheme and the power down mode by writing the
command.
The M6MGD137W34DWG is suitable for a high performance
cellular phone and a mobile PC that are required to be small
mounting area, weight and small power dissipation.
Access Time
Flash
70ns (Max.)
Mobile RAM
80ns (Max.)
Supply Voltage
FM-VCC=2.7 ~ 3.0V
Ambient Temperature
Ta= -40 ~ 85 degree
Package
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Su-Ag-Cu
Application
Mobile communication products
A0-A20
: Common address for Flash/Mobile RAM
DQ0-DQ15 : Data I/O
F-A21
: Address for Flash
F-CE2#
: Flash chip enable 2
M-CE#
: Mobile RAM chip enable
M-WE#
: Write enable for Mobile RAM
F-WP#
: Write protect for Flash
M-LB#
: Lower byte control for Mobile RAM
F-RP#
: Reset power down for Flash
M-UB#
: Upper byte control for Mobile RAM
F-OE#
: Output enable for Flash Memory
Description
Features
FM-VCC
: VCC for Flash / Mobile RAM
GND
: GND for Flash / Mobile RAM
M-OE#
: Output enable for Mobile RAM
F-WE#
: Write enable for Flash Memory
F-RY/BY# : Flash Memory Ready /Busy
NC
: Non Connection
PIN CONFIGURATION (TOP VIEW)
DQ15
F-
RY/BY#
NC
GND
FM-
VCC
F-
OE#
GND
F-
CE1#
DU
NC
NC
NC
NC
NC
DQ1
DQ3
DQ5
DQ7
DQ14
DQ4
DQ2
DQ0
A1
A0
A2
A3
A6
DQ8
DQ9
DQ11
DQ10
DQ12
DQ6
DQ13
A9
A14
A13
A12
F-
RP#
A4
A7
A10
A15
A5
A8
A11
NC
NC
F-
WE#
GND
F-
WP#
M-
LB#
NC
NC
(Top View)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
J
K
L
M
8.5 mm
A18
A17
A16
A19
F-
A21
M-
UB#
INDEX(Laser Marking)
A20
NC
NC
M-
WE#
NC
FM-
VCC
M-
OE#
NC
M-
CE#
F-CE1#
: Flash chip enable 1
F-
CE2#
NC
NC
DU
: Don’t Use


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