Beam Lead Schottky Diodes for

Mixers and Detectors

(1– 26 GHz)

Technical Data

HSCH-5300 Series

Features

• Platinum Tri-Metal System

High Temperature Stability

• Silicon Nitride Passivation

Stable, Reliable Performance

• Low Noise Figure

Guaranteed 7.5 dB at 26 GHz

• High Uniformity

Tightly Controlled Process

Insures Uniform RF

Characteristics

• Rugged Construction

4 Grams Minimum Lead Pull

• Low Capacitance

0.10 pF Max. at 0 V

• Polyimide Scratch Protection

Description

These beam lead diodes are

constructed using a metal-

semiconductor Schottky barrier

junction. Advanced epitaxial

techniques and precise process

control insure uniformity and

repeatability of this planar

passivated microwave semicon-

ductor. A nitride passivation layer

provides immunity from

contaminants which could

otherwise lead to I

The Agilent beam lead process

allows for large beam anchor pads

for rugged construction (typical

6 gram pull strength) without

degrading capacitance.

Outline 07

Maximum Ratings

Pulse Power Incident at T

Pulse Width = 1

µs, Du = 0.001

CW Power Dissipation at T

Measured in an infinite heat sink derated linearly

to zero at maximum rated temperature

T

T

Minimum Lead Strength ........................................ 4 grams pull on any lead

Diode Mounting Temperature ............................... +350

°C for 10 sec. max.

These diodes are ESD sensitive. Handle with care to avoid static

discharge through the diode.

130 (5)

100 (4)

CATHODE

SILICON

GLASS

GOLD LEADS

135 (5)

90 (3)

310 (12)

250 (10)

225 (9)

200 (8)

225 (9)

170 (7)

710 (28)

670 (26)

DIMENSIONS IN

µm (1/1000 inch)

135 (5)

90 (3)

60 (2)

40 (1)

12 (.5)

8 (.3)

30 MIN (1)