3

Minimum

Maximum

Maximum

Maximum

Maximum

Part

Batch*

Breakdown

Dynamic

Total

Forward

Leakage

Number

Matched

Voltage

Resistance

Capacitance

Voltage

Current

HSCH-

HSCH-

Barrier

V

R

V

I

5316

5317

Medium

4

12

0.25

500

100

5312

16

0.15

5310

20

0.10

5336

Low

4

12

0.25

375

400

5332

5333

16

0.15

5330

5331

20

0.10

Test

∆V

I

V

I

V

Conditions

@ 5 mA

f = 1 MHz

*Minimum batch size 20 units.

Table IB. Electrical Specifications for DC Tested Diodes at T

Typical Detector Characteristics at T

Medium Barrier and Low Barrier (DC Bias)

Parameter

Symbol

Typical Value

Units

Test Conditions

Tangential Sensitivity

TSS

-54

dBm

20

µA Bias, R

Video Bandwidth = 2 MHz

Voltage Sensitivity

γ

6.6

mV/

µW

f = 10 GHz

Video Resistance

R

V

1400

Ω

Low Barrier (Zero Bias)

Parameter

Symbol

Typical Value

Units

Test Conditions

Tangential Sensitivity

TSS

-44

dBm

Zero Bias, R

Video Bandwidth = 2 MHz

Voltage Sensitivity

γ

10

mV/

µW

f = 10 GHz

Video Resistance

R

V

1.8

M

Ω

SPICE Parameters

HSCH-5316

HSCH-5312

HSCH-5330

Parameter Units HSCH-5318

HSCH-5314

HSCH-5310 HSCH-5340

HSCH-5332

HSCH-5336

B

V

V5

5

5

5

5

5

C

J0

pF

0.2

0.13

0.09

0.09

0.13

0.20

E

G

eV

0.69

0.69

0.69

0.69

0.69

0.69

I

BV

A

10E - 5

10E - 5

10E - 5

10E - 5

10E - 5

10E-5

I

S

A

3 x 10E - 10

3 x 10E - 10

3 x 10E - 10

4 x 10E - 10

4 x 10E - 8

4 x 10E-8

N

1.08

1.08

1.08

1.08

1.08

1.08

R

S

Ω

5

9

13

13

9

6

P

B

V

0.65

0.65

0.65

0.5

0.5

0.5

P

T

22

2

2

22

M

0.5

0.5

0.5

0.5

0.5

0.5