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HAT2195R Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2195R
Description  Silicon N Channel Power MOS FET Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2195R Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HAT2195R
Rev.3.00, Apr.01.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
——
± 0.1
µAVGS = ±20 V, VDS = 0
Zero gate voltage drain current
IDSS
——
1
µAVDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—4.6
5.8
m
ID = 9 A, VGS = 10 V
Note4
resistance
RDS(on)
—5.8
8.4
m
ID = 9 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|25
42
S
ID = 9 A, VDS = 10 V
Note4
Input capacitance
Ciss
3400
pF
VDS = 10 V
Output capacitance
Coss
785
pF
VGS = 0
Reverse transfer capacitance
Crss
250
pF
f = 1 MHz
Gate Resistance
Rg
1.0
Total gate charge
Qg
23
nC
VDD = 10 V
Gate to source charge
Qgs
10
nC
VGS = 4.5 V
Gate to drain charge
Qgd
5.5
nC
ID = 18 A
Turn-on delay time
td(on)
—12
ns
VGS = 10 V, ID = 9 A
Rise time
tr
—16
ns
VDD
≅ 10 V
Turn-off delay time
td(off)
—50
ns
RL = 1.11
Fall time
tf
6.5
ns
Rg = 4.7
Body–drain diode forward voltage
VDF
0.80
1.04
V
IF = 18 A, VGS = 0
Note4
Body–drain diode reverse recovery
time
trr
—32
ns
IF = 18 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
Main Characteristics
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
500
Ta = 25 °C
1 shot Pulse
PW
= 10
ms
10 µs
100
µs
Operation in
this area is
limited by RDS(on)
Note
5
DC
Operation
(P
W
< 10
s)
1 ms


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