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HAT2195R Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. HAT2195R
Description  Silicon N Channel Power MOS FET Power Switching
Download  7 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2195R Datasheet(HTML) 5 Page - Renesas Technology Corp

   
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HAT2195R
Rev.3.00, Apr.01.2004, page 5 of 6
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
DM
P
PW
T
D =
PW
T
θch - f(t) = γs (t) x θch - f
θch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
t f
Switching Time Test Circuit
Switching Time Waveform
Rg
D. U. T
Rg
I
Monitor
AP
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform


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