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BU2508AW Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BU2508AW
Description  Silicon Diffused Power Transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2508AW Datasheet(HTML) 5 Page - NXP Semiconductors

  BU2508AW Datasheet HTML 1Page - NXP Semiconductors BU2508AW Datasheet HTML 2Page - NXP Semiconductors BU2508AW Datasheet HTML 3Page - NXP Semiconductors BU2508AW Datasheet HTML 4Page - NXP Semiconductors BU2508AW Datasheet HTML 5Page - NXP Semiconductors BU2508AW Datasheet HTML 6Page - NXP Semiconductors BU2508AW Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
Fig.15. Forward bias safe operating area. T
mb = 25˚C
(1)
P
tot max line.
(2)
Second-breakdown limits
(independent of temperature).
I
Region of DC operation.
II
Extension for repetitive pulse operation.
1
10
100
1000
100
10
1
0.1
0.01
tp =
5 us
10
20
50
100
200
500
1 ms
2
5
10
20
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
(1)
(2)
September 1997
5
Rev 1.100


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