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B772SS Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. B772SS
Description  MEDIUM POWER LOW VOLTAGE TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

B772SS Datasheet(HTML) 2 Page - Unisonic Technologies

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B772SS
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-089.B
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Pulse
ICP
-7
A
Collector Current
DC
IC
-3
A
Base Current
IB
-0.6
A
Tc=25℃
10
W
Collector Dissipation
Ta=25℃
PD
350
mW
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100µA, IE=0
-40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA, IB=0
-30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA, IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-30V ,IE=0
-1000
nA
Collector Cut-Off Current
ICEO
VCE=-30V ,IB=0
-1000
nA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-1000
nA
DC Current Gain(Note 1)
hFE1
hFE2
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-2A, IB=-0.2A
-0.3
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=-2A, IB=-0.2A
-1.0
-2.0
V
Current Gain Bandwidth Product
fT
VCE=-5V, IC=-0.1A
80
MHz
Output Capacitance
Cob
VCB=-10V, IE=0,f=1MHz
45
pF
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400


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