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2SC5752 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5752
Description  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC5752 Datasheet(HTML) 1 Page - NEC

 
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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
•PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5752
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5752-T1
3 kpcs/reel
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.


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