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BU1508DX Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BU1508DX
Description  Silicon Diffused Power Transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU1508DX Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
Tj = 125˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
140
-
390
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB = 7.5 V
-
33
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.5 A; IB = 1.1 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.5 A; IB = 1.7 A
-
-
1.3
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
13
-
h
FE
I
C = 4.5 A; VCE = 1 V
4
5.5
7.0
V
F
Diode forward voltage
I
F = 4.5 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
80
-
pF
Switching times (line deflection
I
CM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
circuit). Fig.1, Fig.2 and Fig.3.
-V
BB = 4 V; (-dIB/dt = 0.6 A/µs)
t
s
Turn-off storage time
5.0
6.0
µs
t
f
Turn-off fall time
0.4
0.6
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300


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