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BU1506DX Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BU1506DX
Description  Silicon Diffused Power Transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU1506DX Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
hs ≤ 25 ˚C
-
32
W
V
CEsat
Collector-emitter saturation voltage
I
C = 3.0 A; IB = 0.79 A
-
5.0
V
I
Csat
Collector saturation current
3.0
-
A
V
F
Diode forward voltage
I
F = 3.0 A
1.6
2.0
V
t
f
Fall time
I
CM = 3.0 A; IB(end) = 0.67 A
0.25
0.5
µs
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
8
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-8
A
P
tot
Total power dissipation
T
hs
25 ˚C
-
32
W
T
stg
Storage temperature
-40
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
4.0
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
12 3
case
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.300


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