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HAT2240C Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2240C
Description  Silicon N Channel MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2240C Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT2240C
R07DS1184EJ0500 Rev.5.00
Page 2 of 6
Mar 19, 2014
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±12
IG =
±100 μA, VDS = 0
Gate to source leak current
IGSS
±10
μA
VGS =
±10 V, VDS = 0
Drain to source leak current
IDSS
1
μA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
1.4
V
VDS = 10 V, ID = 1 mA
Drain to source on state resistance
RDS(on)
75
98
m
Ω
ID = 1.3 A, VGS = 4.5 V
Note3
RDS(on)
85
119
m
Ω
ID = 1.3 A, VGS = 2.5 V
Note3
Forward transfer admittance
| yfs |
3.3
5
S
ID = 1.3 A, VDS = 10 V
Note3
Input capacitance
Ciss
590
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Coss
60
pF
Reverse transfer capacitance
Crss
35
pF
Total gate charge
Qg
6
nC
VDD = 10 V, VGS = 4.5 V
ID = 2.5 A
Gate to source charge
Qgs
1.2
nC
Gate to drain charge
Qgd
1.4
nC
Turn - on delay time
td(on)
17
ns
ID = 1.3 A
VGS = 4.5 V, VDD = 10 V
RL = 7.7
Ω, Rg = 4.7 Ω
Rise time
tr
50
ns
Turn - off delay time
td(off)
41
ns
Fall time
tf
4
ns
Body - drain diode forward voltage
VDF
0.8
1.1
V
IF = 2.5 A, VGS = 0
Note3
Notes: 3. Pulse test


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