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HAT2240C Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. HAT2240C
Description  Silicon N Channel MOS FET Power Switching
Download  7 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2240C Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAT2240C
R07DS1184EJ0500 Rev.5.00
Page 4 of 6
Mar 19, 2014
200
160
120
80
40
–25
0
25
50
75
100 125
150
0
0.3
0.1
3
100
10
1
0.1
110
0
20
30
40
50
60
10000
1000
3000
80
0
8
60
6
20
4
40
2
246
8
10
0
1000
1
10
100
0.1
0.3
1
3
10
300
100
10
30
Ciss
Coss
Crss
VDD = 50 V
25 V
10 V
VDD = 50 V
25 V
10 V
10
0
0.2
0.4
0.6
0.8
1.0
10
4
VGS = 0 V
2.5 V
4.5 V
Pulse Test
2
6
8
4.5 V
VDD
VGS
ID = 2.5 A
0.5 A, 1.3 A, 2.5 A
ID = 0.5 A, 1.3 A, 2.5 A
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Case Temperature
Tc (
°C)
Drain Current ID (A)
Gate Charge Qg (nC)
Dynamic Input Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Switching Characteristics
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage VSD (V)
VGS = 4.5 V, VDS = 10 V
RG = 4.7 Ω, Ta = 25°C
tr
td(off)
td(on)
tf
VGS = 0
f = 1 MHz
VGS = 2.5 V
Pulse Test
75
°C
25
°C
Tc = –25
°C
VDS = 10 V
Pulse Test


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