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KM641003C Datasheet(PDF) 3 Page - Samsung semiconductor

Part No. KM641003C
Description  256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)
Download  8 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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KM641003C Datasheet(HTML) 3 Page - Samsung semiconductor

   
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KM641003C
PRELIMINARY
Revision 1.0
- 3 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to Vcc+0.5V
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 7.0
V
Power Dissipation
Pd
1
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
0 to 70
°C
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70
°C)
* VIL(Min) = -2.0V a.c (Pulse Width
≤ 8ns) for I ≤ 20mA.
** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤ 8ns) for I ≤ 20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF
DC AND OPERATING CHARACTERISTICS(TA=0 to 70
°C, Vcc=5.0V±10%, unless otherwise specified)
* VCC=5.0V
±5%, Temp.=25°C.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL,
IOUT=0mA
12ns
-
70
mA
15ns
-
68
20ns
-
65
Standby Current
ISB
Min. Cycle, CS=VIH
-
30
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN≤0.2V
-
5
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
VOH1*
IOH1=-0.1mA
-
3.95
V


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