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K6R1004C1B Datasheet(PDF) 1 Page - Samsung semiconductor

Part No. K6R1004C1B
Description  256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1004C1B Datasheet(HTML) 1 Page - Samsung semiconductor

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K6R1004C1B-C
CMOS SRAM
PRELIMINARY
Rev 2.0
- 1 -
February 1998
PRELIMINARY
Preliminary
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
RevNo.
Rev. 0.0
Rev.1.0
Rev.2.0
Remark
Design Target
Preliminary
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Delete Industrial Temperature Range Part.
2.5. Delete TSOP2 Package.
2.6. Add Capacitive load of the test environment in A.C test load.
2.7. Change D.C characteristics.
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
ICC
150/140/130mA
150/145/140mA
ISB
30mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Feb. 25th, 1998


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