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K6E1004C1B Datasheet(PDF) 3 Page - Samsung semiconductor

Part No. K6E1004C1B
Description  256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
Download  9 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6E1004C1B Datasheet(HTML) 3 Page - Samsung semiconductor

   
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K6E1004C1B-C/B-L
CMOS SRAM
PRELIMINARY
Rev. 3.0
- 3 -
July 1998
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70
°C)
* VIL(Min) = -2.0V a.c(Pulse Width
≤ 10ns) for I ≤ 20mA .
** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤10ns) for I ≤ 20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS (TA=0 to 70
°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
15ns
-
120
mA
20ns
-
118
Standby Current
ISB
Min. Cycle, CS=VIH
-
20
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN≤0.2V
Normal
-
5
mA
L-ver
-
1
mA
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 7.0
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 7.0
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
0 to 70
°C


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