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HAT2114R Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. HAT2114R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2114R Datasheet(HTML) 3 Page - Renesas Technology Corp

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HAT2114R, HAT2114RJ
Rev.1.00, Oct.06.2003, page 3 of 9
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±20
V
IG = ±100
µA, VDS = 0
Zero gate voltage drain current
IDSS
——1
µAVDS = 60 V, VGS = 0
Zero gate voltage
HAT2114R
IDSS
———
µAVDS = 48 V, VGS = 0
drain current
HAT2114RJ IDSS
——10
µA
Ta = 125
°C
Gate to source leak current
IGSS
——±10
µAVGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
2.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|6
9.5
S
ID = 3 A
Note5, V
DS = 10 V
Static drain to source on state
RDS(on)
—28
32
m
ID = 3 A
Note5, V
GS = 10 V
resistance
RDS(on)
—40
50
m
ID = 3 A
Note5, V
GS = 4.5 V
Input capacitance
Ciss
1000
pF
VDS = 10V, VGS = 0
Output capacitance
Coss
145
pF
f = 1 MHz
Reverse transfer capacitance
Crss
85
pF
Total gate charge
Qg
15
nC
VDD = 25 V
Gate to source charge
Qgs
2
nC
VGS = 10 V
Gate to drain charge
Qgd
3
nC
ID = 6A
Turn-on delay time
td(on)
12
ns
VGS = 10 V, ID= 3 A
Rise time
tr
10
ns
VDD
≅ 30 V
Turn-off delay time
td(off)
60
ns
RL = 10
Fall time
tf
11
ns
RG =4.7
Body-drain diode forward voltage
VDF
0.82
1.07
V
IF = 6 A, VGS = 0
Note5
Body-drain diode reverse recovery
time
trr
40
ns
IF = 6A, VGS = 0
diF/dt = 100 A/µs
Notes: 5. Pulse test


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