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SI4914DY Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI4914DY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4914DY Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Document Number: 72938
S-61959-Rev. C, 09-Oct-06
Vishay Siliconix
Si4914DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TJ = 150 °C
40
10
1
VSD – Source-to-Drain Voltage (V)
TJ = 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ – Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0
2468
10
VGS – Gate-to-Source Voltage (V)
ID = 7 A
0.001
0
1
200
80
120
10
0.1
Time (sec)
40
160
0.01
Safe Operating Area
VDS – Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
TC = 25 °C
Single Pulse
0.1
IDM Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited
1 ms
10 ms
100 ms
dc
1 s
10 s


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