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SI4914DY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4914DY Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page ![]() www.vishay.com 4 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Vishay Siliconix Si4914DY CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 40 10 1 VSD – Source-to-Drain Voltage (V) TJ = 25 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 VGS – Gate-to-Source Voltage (V) ID = 7 A 0.001 0 1 200 80 120 10 0.1 Time (sec) 40 160 0.01 Safe Operating Area VDS – Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse 0.1 IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited 1 ms 10 ms 100 ms dc 1 s 10 s |