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SI4914DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4914DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Vishay Siliconix Si4914DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1.0 2.5 V Ch-2 1.0 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Ch-1 100 nA Ch-2 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA Ch-2 500 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-1 0.015 mA Ch-2 20 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-1 20 A Ch-2 20 Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 7.0 A Ch-1 0.019 0.023 Ω VGS = 10 V, ID = 7.4 A Ch-2 0.016 0.020 VGS = 4.5 V, ID = 5.6 A Ch-1 0.026 0.032 VGS = 4.5 V, ID = 6.4 A Ch-2 0.022 0.027 Forward Transconductanceb gfs VDS = 15 V, ID = 7.0 A Ch-1 19 S VDS = 15 V, ID = 7.4 A Ch-2 22 Diode Forward Voltageb VSD IS = 1.7 A, VGS = 0 V Ch-1 0.75 1.1 V IS = 1 A, VGS = 0 V Ch-2 0.36 0.40 Dynamica Total Gate Charge Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 7.0 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 7.4 A Ch-1 5.6 8.5 nC Ch-2 7.3 11 Gate-Source Charge Qgs Ch-1 2.3 Ch-2 2.8 Gate-Drain Charge Qgd Ch-1 1.7 Ch-2 2.2 Gate Resistance Rg Ch-1 0.5 2.3 3.6 Ω Ch-2 0.5 1.6 2.5 Turn-On Delay Time td(on) Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Ch-1 6 10 ns Ch-2 7 11 Rise Time tr Ch-1 13 20 Ch-2 13 20 Turn-Off Delay Time td(off) Ch-1 27 40 Ch-2 35 53 Fall Time tf Ch-1 9 15 Ch-2 10 15 Source-Drain Reverse Recovery Time trr IF = 1.3 A, di/dt = 100 A/µs Ch-1 30 50 IF = 2.2 A, di/dt = 100 µA/µs Ch-2 30 50 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.36 0.40 V IF = 1.0 A, TJ = 150 °C 0.27 0.31 Maximum Reverse Leakage Current Irm Vr = 30 V 0.008 0.50 mA Vr = 30 V, TJ = 100 °C 3.5 10 Vr = - 30 V, TJ = 125 °C 10 100 Junction Capacitance CT Vr = 10 V 58 pF |
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