SI4914DY datasheet(2/9 Pages) VISHAY

Part #	SI4914DY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72938

S-61959-Rev. C, 09-Oct-06

Vishay Siliconix

Si4914DY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Ch-1

1.0

2.5

V

Ch-2

1.0

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

Ch-1

100

nA

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

1

µA

Ch-2

500

VDS = 30 V, VGS = 0 V, TJ = 85 °C

Ch-1

0.015

mA

Ch-2

20

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch-1

20

A

Ch-2

20

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 7.0 A

Ch-1

0.019

0.023

Ω

VGS = 10 V, ID = 7.4 A

Ch-2

0.016

0.020

VGS = 4.5 V, ID = 5.6 A

Ch-1

0.026

0.032

VGS = 4.5 V, ID = 6.4 A

Ch-2

0.022

0.027

Forward Transconductanceb

gfs

VDS = 15 V, ID = 7.0 A

Ch-1

19

S

VDS = 15 V, ID = 7.4 A

Ch-2

22

Diode Forward Voltageb

VSD

IS = 1.7 A, VGS = 0 V

Ch-1

0.75

1.1

V

IS = 1 A, VGS = 0 V

Ch-2

0.36

0.40

Dynamica

Total Gate Charge

Qg

Channel-1

VDS = 15 V, VGS = 4.5 V, ID = 7.0 A

Channel-2

VDS = 15 V, VGS = 4.5 V, ID = 7.4 A

Ch-1

5.6

8.5

nC

Ch-2

7.3

11

Gate-Source Charge

Qgs

Ch-1

2.3

Ch-2

2.8

Gate-Drain Charge

Qgd

Ch-1

1.7

Ch-2

2.2

Gate Resistance

Rg

Ch-1

0.5

2.3

3.6

Ω

Ch-2

0.5

1.6

2.5

Turn-On Delay Time

td(on)

Channel-1

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

Channel-2

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

Ch-1

6

10

ns

Ch-2

7

11

Rise Time

tr

Ch-1

13

20

Ch-2

13

20

Turn-Off Delay Time

td(off)

Ch-1

27

40

Ch-2

35

53

Fall Time

tf

Ch-1

9

15

Ch-2

10

15

Source-Drain Reverse Recovery Time

trr

IF = 1.3 A, di/dt = 100 A/µs

Ch-1

30

50

IF = 2.2 A, di/dt = 100 µA/µs

Ch-2

30

50

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Forward Voltage Drop

VF

IF = 1.0 A

0.36

0.40

V

IF = 1.0 A, TJ = 150 °C

0.27

0.31

Maximum Reverse Leakage Current

Irm

Vr = 30 V

0.008

0.50

mA

Vr = 30 V, TJ = 100 °C

3.5

10

Vr = - 30 V, TJ = 125 °C

10

100

Junction Capacitance

CT

Vr = 10 V

58

pF

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