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SI4914DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4914DY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4914DY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Document Number: 72938
S-61959-Rev. C, 09-Oct-06
Vishay Siliconix
Si4914DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1.0
2.5
V
Ch-2
1.0
2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
Ch-1
100
nA
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
1
µA
Ch-2
500
VDS = 30 V, VGS = 0 V, TJ = 85 °C
Ch-1
0.015
mA
Ch-2
20
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Ch-1
20
A
Ch-2
20
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 7.0 A
Ch-1
0.019
0.023
Ω
VGS = 10 V, ID = 7.4 A
Ch-2
0.016
0.020
VGS = 4.5 V, ID = 5.6 A
Ch-1
0.026
0.032
VGS = 4.5 V, ID = 6.4 A
Ch-2
0.022
0.027
Forward Transconductanceb
gfs
VDS = 15 V, ID = 7.0 A
Ch-1
19
S
VDS = 15 V, ID = 7.4 A
Ch-2
22
Diode Forward Voltageb
VSD
IS = 1.7 A, VGS = 0 V
Ch-1
0.75
1.1
V
IS = 1 A, VGS = 0 V
Ch-2
0.36
0.40
Dynamica
Total Gate Charge
Qg
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 7.0 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 7.4 A
Ch-1
5.6
8.5
nC
Ch-2
7.3
11
Gate-Source Charge
Qgs
Ch-1
2.3
Ch-2
2.8
Gate-Drain Charge
Qgd
Ch-1
1.7
Ch-2
2.2
Gate Resistance
Rg
Ch-1
0.5
2.3
3.6
Ω
Ch-2
0.5
1.6
2.5
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Channel-2
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Ch-1
6
10
ns
Ch-2
7
11
Rise Time
tr
Ch-1
13
20
Ch-2
13
20
Turn-Off Delay Time
td(off)
Ch-1
27
40
Ch-2
35
53
Fall Time
tf
Ch-1
9
15
Ch-2
10
15
Source-Drain Reverse Recovery Time
trr
IF = 1.3 A, di/dt = 100 A/µs
Ch-1
30
50
IF = 2.2 A, di/dt = 100 µA/µs
Ch-2
30
50
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 1.0 A
0.36
0.40
V
IF = 1.0 A, TJ = 150 °C
0.27
0.31
Maximum Reverse Leakage Current
Irm
Vr = 30 V
0.008
0.50
mA
Vr = 30 V, TJ = 100 °C
3.5
10
Vr = - 30 V, TJ = 125 °C
10
100
Junction Capacitance
CT
Vr = 10 V
58
pF


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