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SI4914DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4914DY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4914DY Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Vishay Siliconix
Si4914DY
New Product
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
LITTLE FOOT® Plus Integrated Schottky
100 % Rg Tested
APPLICATIONS
Logic DC/DC
- Notebook PC
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
Channel-1
30
0.023 at VGS = 10 V
7.0
0.032 at VGS = 4.5 V
5.6
Channel-2
0.020 at VGS = 10 V
7.4
0.027 at VGS = 4.5 V
6.4
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.40 V at 1.0 A
2.0
D1
G1
D1
S1/D2
G2
S1/D2
S2
S1/D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free)
G2
S2
N-Channel 2
MOSFET
Schottky Diode
G1
D1
N-Channel 1
MOSFET
S1/D2
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
10 sec
Steady State
10 sec
Steady State
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
7.0
5.5
7.4
5.7
A
TA = 70 °C
5.6
4.364.5
Pulsed Drain Current
IDM
40
40
Continuous Source Current (Diode Conduction)a
IS
1.7
1.0
1.8
0.95
Single Pulse Avalanche Current
L = 0.1 mH
IAS
13
15
Avalanche Energy
EAS
8.45
11
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
1.9
1.1
2.0
1.16
W
TA = 70 °C
1.2
0.71
1.3
0.74
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ
Max
Typ
Max
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
52
65
47
60
°C/W
Steady State
90
112
85
107
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
38
28
35
RoHS
COMPLIANT


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