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BTA204-600F Datasheet(PDF) 2 Page - NXP Semiconductors |
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BTA204-600F Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Three quadrant triacs BTA204 series B and C high commutation THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA204- ...B ...C I GT Gate trigger current 2 V D = 12 V; IT = 0.1 A T2+ G+ - - 50 35 mA T2+ G- - - 50 35 mA T2- G- - - 50 35 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - - 30 20 mA T2+ G- - - 45 30 mA T2- G- - - 30 20 mA I H Holding current V D = 12 V; IGT = 0.1 A - - 30 20 mA V T On-state voltage I T = 5 A - 1.4 1.7 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT BTA204- ...B ...C dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; 1000 1000 - V/ µs off-state voltage exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; 6 3 - A/ms commutating current dV com/dt = 20V/µs; gate open circuit t gt Gate controlled turn-on I TM = 12 A; VD = VDRM(max); IG = 0.1 A; - - 2 µs time dI G/dt = 5 A/µs 2 Device does not trigger in the T2-, G+ quadrant. December 1998 2 Rev 1.000 |
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