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IRFW550A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. IRFW550A
Description  Advanced Power MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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IRFW550A Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/ T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS=0V,ID=250
A
I
D=250
A
See Fig 7
V
DS=5V,ID=250
A
V
GS=20V
V
GS=-20V
V
DS=100V
V
DS=80V,TC=150
V
GS=10V,ID=20A
V
DS=40V,ID=20A
V
DD=50V,ID=40A,
R
G=6.2
See Fig 13
V
DS=80V,VGS=10V,
I
D=40A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J=25
,I
S=40A,VGS=0V
T
J=25
,I
F=40A
di
F/dt=100A/
s
ΟC
µ
O
4
O
5
ΟC
µ
µ
ΟC
O
4
O
4
O
4
ΟC
µ
ΟC
O
5
O
4
µ
µ
O
4
O
1
IRFW/I550A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
420
185
17
20
80
45
75
13.2
34.8
--
--
4.0
100
-100
10
100
0.04
--
2270
485
215
50
50
160
100
97
--
--
27.44
1750
--
--
--
135
0.65
40
160
1.6
--
--
Notes ;
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=0.6mH, I
AS=40A, VDD=25V, RG=27
, Starting T
J =25
I
SD
40A, di/dt
470A/ s, V
DD
BV
DSS , Starting T J =25
Pulse Test : Pulse Width = 250 s, Duty Cycle
2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
O
1
O
2
O
3
O
4
O
5
oC
oC
µ
µ


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