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IRFW550A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. IRFW550A
Description  Advanced Power MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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IRFW550A Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Operating Temperature
Lower Leakage Current : 10
A (Max.) @ V
DS = 100V
Lower R
DS(ON) : 0.032
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C=25
)
Continuous Drain Current (T
C=100
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A=25
)
Total Power Dissipation (T
C=25
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J , TSTG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
A
V
DSS
V
*
µ
O
1
O
2
O
3
ΟC
ΟC
O
1
O
1
ΟC
ΟC
ΟC
ΟC
ΟC
θ
θ
ΟC
θ
IRFW/I550A
BV
DSS = 100 V
R
DS(on) = 0.04
I
D = 40 A
100
40
28.3
160
640
40
16.7
6.5
3.8
167
1.11
- 55 to +175
300
0.9
40
62.5
--
--
--
20
+
_
©1999 Fairchild Semiconductor Corporation
Rev. B


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