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FLX257XV Datasheet(PDF) 1 Page - Eudyna Devices Inc

Part No. FLX257XV
Description  GaAs FET & HEMT Chips
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Maker  EUDYNA [Eudyna Devices Inc]
Homepage  http://www.sei-device.com/index.asp
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FLX257XV Datasheet(HTML) 1 Page - Eudyna Devices Inc

   
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1
Edition 1.4
October 2004
FLX257XV
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
-
1000
1500
-
600
-
-1.0
-2.0
-3.5
-5
--
6.5
7.5
-
-31
-
32.5
33.5
-
VDS = 5V, IDS = 50mA
VDS = 5V, IDS = 600mA
VDS = 5V, VGS = 0V
IGS = -50µA
VDS = 10V
IDS ≈ 0.6IDSS
f = 10GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
ηadd
Thermal Resistance
-8
10
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case
°C/W
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DESCRIPTION
The FLX257XV chip is a power GaAs FET that is
designed for general purpose applications in the X-Band
frequency range as it provides superior power, gain, and
efficiency.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
95
40
(Unit:
µm)
Drain
Drain
Drain
Drain
Gate
Gate
Gate
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
15.0
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200
Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
FEATURES
• High Output Power: P1dB = 33.5dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE:
ηadd = 31%(Typ.)
• Proven Reliability


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