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2SK3651-01R Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3651-01R Datasheet(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Ratings Unit Drain-source voltage VDS 200 VDSX *5 220 Continuous drain current ID ±25 Pulsed drain current ID(puls] ±100 Gate-source voltage VGS ±30 Non-repetitive Avalanche current IAS *2 25 Maximum Avalanche Energy EAS *1 372 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 3.10 Tc=25°C 85 Operating and storage Tch +150 temperature range Tstg Isolation voltage VISO *6 2 Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3651-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V ID=12.5A VGS=10V ID=12.5A VDS=25V VCC=72V ID=12.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA m Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.471 40.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=72V ID=12A VGS=10V L=100 µH Tch=25°C IF=25A VGS=0V Tch=25°C IF=25A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W °C °C kVrms 250 3.0 5.0 25 250 10 100 75 100 816 2000 3000 400 600 25 38 20 30 30 45 60 90 20 30 44 66 14 21 16 24 25 1.10 1.65 0.45 1.5 -55 to +150 Outline Drawings (mm) Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *1 L=1mH, Vcc=48V *2 Tch 150°C = < *4 VDS 250V < = www.fujielectric.co.jp/denshi/scd *5 VGS=-30V *6 t=60sec f=60Hz |
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