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BT168GW Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BT168GW
Description  Thyristors logic level for RCD/ GFI/ LCCB applications
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT168GW Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Thyristors
BT168W series
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
MAX. UNIT
thyristors
in
a
plastic
envelope
suitable
for
surface
mounting,
BT168
BW
DW
EW
GW
intended for use in Residual Current
V
DRM,
Repetitive peak
200
400
500
600
V
Devices/ Ground Fault Interrupters/
V
RRM
off-state voltages
Leakage Current Circuit Breakers
I
T(AV)
Average on-state
0.6
0.6
0.6
0.6
A
(RCD/ GFI/ LCCB)
applications
current
where a minimum I
GT limit is needed.
I
T(RMS)
RMS on-state current
1111
A
These devices may be interfaced
I
TSM
Non-repetitive peak
8888
A
directly
to
microcontrollers,
logic
on-state current
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BDE
G
V
DRM, VRRM
Repetitive peak off-state
-
200
1
400
1
500
1
600
1
V
voltages
I
T(AV)
Average on-state current
half sine wave;
-
0.63
A
T
sp ≤ 112 ˚C
I
T(RMS)
RMS on-state current
all conduction angles
-
1
A
I
TSM
Non-repetitive peak
t = 10 ms
-
8
A
on-state current
t = 8.3 ms
-
9
A
half sine wave;
T
j = 25 ˚C prior to surge
I
2tI2t for fusing
t = 10 ms
-
0.32
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 2 A; IG = 10 mA;
-
50
A/
µs
on-state current after
dI
G/dt = 100 mA/µs
triggering
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
5
V
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
2
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.1
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
ak
g
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
µs.
September 1997
1
Rev 1.100


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