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SI1304BDL Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI1304BDL
Description  N-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI1304BDL Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Vishay Siliconix
SPICE Device Model Si1304BDL
www.vishay.com
Document Number: 74133
S-52210
Rev. A, 24-Oct-05
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.1
V
On-State Drain Current
a
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
12
A
VGS = 4.5 V, ID = 0.9 A
0.21
0.216
Drain-Source On-State Resistance
a
rDS(on)
VGS = 2.5 V, ID = 0.75 A
0.30
0.308
Forward Transconductance
a
gfs
VDS = 15 V, ID = 0.9 A
3
2
S
Diode Forward Voltage
a
VSD
IS = 0.28 A
0.78
0.80
V
Dynamic
b
Input Capacitance
Ciss
132
100
Output Capacitance
Coss
28
30
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
14
20
pF
VDS = 15 V, VGS = 4.5 V, ID = 0.9 A
1.2
1.8
Total Gate Charge
Qg
0.8
1.1
Gate-Source Charge
Qgs
0.4
0.4
Gate-Drain Charge
Qgd
VDS = 15 V, VGS = 2.5 V, ID = 0.9 A
0.6
0.6
nC
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.


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