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HAT2171H Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT2171H Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 8 page 
HAT2171H Rev.4.00 Sep 20, 2005 page 3 of 7 Main Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc ( °C) Power vs. Temperature Derating Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 50 40 30 20 10 0 24 6 8 10 50 40 30 20 10 0 24 6 8 10 Tc = 75 °C 25 °C –25 °C VDS = 10 V Pulse Test VGS = 3 V 10 V 4 V 3.2 V 3.4 V 3.6 V 3.8 V Pulse Test 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 500 Ta = 25 °C 1 shot Pulse PW = 10 ms 10 µs 100 µs Operation in this area is limited by RDS(on) 1 ms 40 30 20 10 0 50 100 150 200 DC Operation Tc = 25 °C 250 200 150 100 50 0 4 8 12 16 20 Pulse Test ID = 20 A 5 A 10 A 100 10 1 3 30 0.1 0.3 30 300 1 10 100 1000 3 VGS = 7 V 10 V Pulse Test |
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