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HAT2171H Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2171H Datasheet(HTML) 2 Page - Renesas Technology Corp |
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HAT2171H Rev.4.00 Sep 20, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ± 10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 3.0 V VDS = 10 V, I D = 1 mA RDS(on) — 3.8 4.8 m Ω ID = 20 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 4.4 6.0 m Ω ID = 20 A, VGS = 7 V Note4 Forward transfer admittance |yfs| 30 50 — S ID = 20 A, VDS = 10 V Note4 Input capacitance Ciss — 3750 — pF Output capacitance Coss — 760 — pF Reverse transfer capacitance Crss — 230 — pF VDS = 10 V, VGS = 0, f = 1 MHz Gate Resistance Rg — 0.5 — Ω Total gate charge Qg — 52 — nC Gate to source charge Qgs — 15 — nC Gate to drain charge Qgd — 6 — nC VDD = 10 V, VGS = 10 V, ID = 40 A Turn-on delay time td(on) — 14 — ns Rise time tr — 30 — ns Turn-off delay time td(off) — 41 — ns Fall time tf — 5.5 — ns VGS = 10 V, ID = 20 A, VDD ≅ 10 V, RL = 0.5 Ω, Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.82 1.07 V IF = 40 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 38 — ns IF = 40 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
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