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HAT2171H Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2171H
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2171H Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT2171H
Rev.4.00 Sep 20, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
40
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG = ±100
µA, VDS = 0
Gate to source leak current
IGSS
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 40 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
3.0
V
VDS = 10 V, I D = 1 mA
RDS(on)
3.8
4.8
m
ID = 20 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
4.4
6.0
m
ID = 20 A, VGS = 7 V
Note4
Forward transfer admittance
|yfs|
30
50
S
ID = 20 A, VDS = 10 V
Note4
Input capacitance
Ciss
3750
pF
Output capacitance
Coss
760
pF
Reverse transfer capacitance
Crss
230
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Gate Resistance
Rg
0.5
Total gate charge
Qg
52
nC
Gate to source charge
Qgs
15
nC
Gate to drain charge
Qgd
6
nC
VDD = 10 V, VGS = 10 V,
ID = 40 A
Turn-on delay time
td(on)
14
ns
Rise time
tr
30
ns
Turn-off delay time
td(off)
41
ns
Fall time
tf
5.5
ns
VGS = 10 V, ID = 20 A,
VDD
≅ 10 V, RL = 0.5 Ω,
Rg = 4.7
Body–drain diode forward voltage
VDF
0.82
1.07
V
IF = 40 A, VGS = 0
Note4
Body–drain diode reverse recovery
time
trr
38
ns
IF = 40 A, VGS = 0
diF/ dt = 100 A/
µs
Notes: 4. Pulse test


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