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HAT2171H Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAT2171H Datasheet(HTML) 1 Page - Renesas Technology Corp |
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Rev.4.00 Sep 20, 2005 page 1 of 7 HAT2171H Silicon N Channel Power MOS FET Power Switching REJ03G0131-0400 Rev.4.00 Sep 20, 2005 Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 1 2 3 4 5 1, 2, 3 Source 4 Gate 5 Drain G D SS S 4 12 3 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Avalanche current IAP Note 2 25 A Avalanche energy EAR Note 2 50 mJ Channel dissipation Pch Note3 25 W Channel to Case Thermal Resistance θch-C 5.0 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. Tc = 25 °C |
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