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CM20MD3-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM20MD3-12H
Description  MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM20MD3-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI IGBT MODULES
CM20MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25
°C)
INVERTER PART
CONVERTER PART
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150
°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
The conductive greese applied, between module and fin.
Al plate is used as fin.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
2.8
2.0
1.5
0.4
120
300
200
300
2.8
110
2.2
3.1
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 150
°C
VCC = 300V, IC = 20A, VGE = 15V
VCC = 300V, IC = 20A
VGE1 = VGE2 = 15V
RG = 31
Resistive load
IE = 20A, VGE = 0V
IE = 20A, VGE = 0V
die / dt = – 40A /
µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
µ A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µ C
°C/W
°C/W
2.1
2.15
60
0.05
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note. 1)
trr (Note. 1)
Qrr (Note. 1)
Rth(j-f)Q (Note. 5)
Rth(j-f)R (Note. 5)
Symbol
Parameter
Test conditions
VGE(th)
VCE(sat)
Limits
Min.
Typ.
Max.
Unit
6
4.5
7.5
IC = 2mA, VCE = 10V
IC = 20A, VGE = 15V
(Note. 4)
VCE = 10V
VGE = 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
VR = VRRM, Tj = 150
°C
IF = 25A
Per 1/4 module
mA
V
°C/W
IRRM
VFM
Rth(j-f) (Note. 5)
Symbol
Parameter
Condition
Limits
Min.
Typ.
Max.
Unit
8
1.5
3.3


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