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CM20MD3-12H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM20MD3-12H
Description  MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM20MD3-12H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI IGBT MODULES
CM20MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
MAXIMUM RATINGS (Tj = 25
°C)
INVERTER PART
CONVERTER PART
COMMON RATING
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Emitter Current
Maximum collector dissipation
600
±20
20
40
20
40
57
G – E Short
C – E Short
TC = 25
°C
PULSE
(Note. 2)
TC = 25
°C
PULSE
(Note. 2)
Tf = 25
°C
Symbol
Parameter
Condition
Unit
Rating
V
V
A
A
A
A
W
VCES
VGES
IC
ICM
IE (Note. 1)
IEM (Note. 1)
PC (Note. 3)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
800
220
15
375
585
1
φ rectifying circuit Tf = 108°C
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
Symbol
Parameter
Condition
Unit
Rating
V
V
A
A
A2s
VRRM
Ea
IO
IFSM
I2t
Tj
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
–40 ~ +150
–40 ~ +125
2500
1.47 ~1.96
60
AC 1 min.
Mounting M4 screw
Typical value
Symbol
Parameter
Condition
Unit
Rating
°C
°C
V
N . m
g


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