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MRF1047T1 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF1047T1
Description  NPN Silicon Low Noise Transistor
Download  12 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF1047T1 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF1047T1
2
MOTOROLA RF PRODUCTS DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS [Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
5.0
Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
12
Vdc
Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)CBO
2.5
Vdc
Collector Cutoff Current (VCB =1.0 V, IE = 0)
ICBO
0.2
µA
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
IEBO
0.1
µA
ON CHARACTERISTICS [Note 1]
DC Current Gain (VCE = 3.0 V, IC = 3.0 mA)
hFE
100
300
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
0.4
pF
Current–Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 15 mA, f = 1.0 GHz)
fτ
12
GHz
PERFORMANCE CHARACTERISTICS
Insertion Gain
|S21|2
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
8.0
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
13
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
MSG, MAG
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
11
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
16
Minimum Noise Figure
NFmin
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
1.2
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
1.0
Associated Gain at Minimum NF
GNF
dB
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
10
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
13
Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,
IC = 3.0 mA, f = 1.0 GHz)
P1dB
0.5
dBm
Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,
f = 1.0 GHz)
OIP3
22
dBm
NOTES: 1. Pulse width
≤300 µs, duty cycle ≤2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG
+
|
S
21
S
12
K
" K2 * 1
|, if K u 1, MSG + |
S
21
S
12
|,ifK t 1
3. Zin = 50 Ω and Zout matched for optimum IP3.


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