 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF6622 Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6622 Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 9 page 
www.irf.com 1 04/04/06 IRF6622 DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Socket l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A. Notes: DirectFET ISOMETRIC PD - 97199 Description The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge. 0 2468 10 12 14 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 20V VDS= 13V VDS= 5.0V ID= 12A VDSS VGS RDS(on) RDS(on) 25V max ±20V max 4.9m Ω@ 10V 6.8mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 12 Max. 12 59 120 ±20 25 15 13 SQ SX ST MQ MX MT MP Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V SQ 3 4 5 6 7 8 9 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 15A TJ = 25°C TJ = 125°C |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
