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IRF6622 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF6622
Description  DirectFET Power MOSFET
Download  9 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF6622 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
04/04/06
IRF6622
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Socket

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
Notes:
DirectFET
™ ISOMETRIC
PD - 97199
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
0
2468
10
12
14
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 12A
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9m
Ω@ 10V 6.8mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
12
Max.
12
59
120
±20
25
15
13
SQ
SX
ST
MQ
MX
MT
MP
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
3.8nC
1.6nC
7.1nC
7.7nC
1.8V
SQ
3
4
5
6
7
8
9
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
ID = 15A
TJ = 25°C
TJ = 125°C


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