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DS3984Z Datasheet(PDF) 4 Page - Dallas Semiconductor

Part # DS3984Z
Description  4-Channel Cold-Cathode Fluorescent Lamp Controller
Download  24 Pages
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Manufacturer  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS3984Z Datasheet(HTML) 4 Page - Dallas Semiconductor

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4-Channel Cold-Cathode
Fluorescent Lamp Controller
4
_____________________________________________________________________
I2C AC ELECTRICAL CHARACTERISTICS (See Figure 9)
(VCC = +4.5V to +5.5V, timing referenced to VIL(MAX) and VIH(MIN), TA = -40°C to +85°C.)
Note 1:
All voltages are referenced to ground, unless otherwise noted. Currents into the IC are positive, out of the IC negative.
Note 2:
During fault conditions, the AC-coupled feedback values are allowed to be outside the Absolute Max Rating of the LCM or
OVD pin for up to 1 second.
Note 3:
Voltage with respect to VDCB.
Note 4:
This is the minimum pulse width guaranteed to generate an output burst, which will generate the DS3984’s minimum burst
duty cycle. This duty cycle may be greater than the duty cycle of the PSYNC input. Once the duty cycle of the PSYNC
input is greater than the DS3984’s minimum duty cycle, the output’s duty cycle will track the PSYNC’s duty cycle. Leaving
PSYNC low (0% duty cycle) disables the GAn and GBn outputs in DPWM Slave mode.
Note 5:
This is the maximum lamp frequency duty cycle that will be generated at any of the GAn or GBn outputs.
Note 6:
I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I2C stan-
dard-mode timing.
Note 7:
After this period, the first clock pulse can be generated.
Note 8:
CB—total capacitance allowed on one bus line in picofarads.
Note 9:
EEPROM write time applies to all the EEPROM memory. EEPROM write begins after a stop condition occurs.
Note 10: Guaranteed by design.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SCL Clock Frequency
fSCL
(Note 6)
0
400
kHz
Bus Free Time Between Stop and
Start Conditions
tBUF
1.3
µs
Hold Time (Repeated) Start
Condition
tHD:STA
(Note 7)
0.6
µs
Low Period of SCL
tLOW
1.3
µs
High Period of SCL
tHIGH
0.6
µs
Data Hold Time
tHD:DAT
0
0.9
µs
Data Setup Time
tSU:DAT
100
ns
Start Setup Time
tSU:STA
0.6
µs
SDA and SCL Rise Time
tR
(Note 8)
20 +
0.1CB
300
ns
SDA and SCL Fall Time
tF
(Note 8)
20 +
0.1CB
300
ns
Stop Setup Time
tSU:STO
0.6
µs
SDA and SCL Capacitive
Loading
CB
(Note 8)
400
pF
EEPROM Write Time
tW
(Note 9)
20
30
ms
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +4.5V to +5.5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Cycles
+70°C (Note 10)
50,000
Cycles


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