FEATURES:
• High Gain Bandwidth Product
f
t
= 10 GHz typ @ I
C
= 4mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S
21
|
2 = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T
A = 25
oC)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
BIPOLARICS, INC.
Part Number BRF504
SYMBOL
PARAMETERS & CONDITIONS
UNIT
MIN.
TYP.
MAX.
V
CE
=8V, I
C
= 4 mA unless stated
V
CBO
Collector-Base Voltage
10
V
V
CEO
Collector-Emitter Voltage
10
V
V
EBO
Emitter-Base Voltage
1.5
V
I
C CONT
Collector Current
8
mA
T
J
Junction Temperature
200
oC
T
STG
Storage Temperature
-65 to 150
oC
SYMBOL
PARAMETERS
RATING
UNITS
Absolute Maximum Ratings:
Insertion Power Gain:
f = 1.0 GHz, I
C
= 4 mA
17.5
I
C
= 8 mA
18.1
f = 2.0 GHz, I
C
= 4mA
12.8
I
C
= 8 mA
12.6
NF
Noise Figure: V
CE
=8V, I
C
= 0.8mA
f = 1.0 GHz
dB
1.6
Z
S
= 50
Ω
C
CB
Collector Base Capacitance: V
CB
= 8V
f = 1MHz
pF
0.07
I
CBO
Collector Cutoff Current
: V
CB
=8V
µA
0.2
V
CE
= 8V, I
C
= 4 mA
f
t
|S
21
| 2
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF504 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF504 an excellent choice for battery application. From 4
mA to over 8mA, f
t
is nominally 10 GHz. Maximum
recommended continuous current is 16 mA. A broad range
of packages are offered including SOT-23, SOT-143, plastic
and ceramic 0.085" Micro-X, 0.070" Stripline and unencap-
sulated dice.
Gain Bandwidth Product
GHz
10
P
1d B
Power output at 1dB compression:
f = 1.0 GHz
dBm
10
G
1d B
Gain at 1dB compression:
f = 1.0 GHz
dBm
15
h
FE
Forward Current Transfer Ratio:
f = 1MHz
50
100
250
I
EBO
Emitter Cutoff Current : V
EB =1V
µA
1.0
PRODUCT DATA SHEET
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