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ES1 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. ES1
Description  SMA ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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ES1 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2000 Feb 14
2
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
FEATURES
• Glass passivated
• High maximum operating temperature
• Ideal for surface mount automotive applications
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• UL 94V-O classified plastic package
• Shipped in 12 mm embossed tape
• Marking: cathode, date code, type code
• Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
olumns
MSA474
Top view
Side view
cathode
band
ka
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
ES1A
50
V
ES1B
100
V
ES1C
150
V
ES1D
200
V
VR
continuous reverse voltage
ES1A
50
V
ES1B
100
V
ES1C
150
V
ES1D
200
V
VRMS
root mean square voltage
ES1A
35
V
ES1B
70
V
ES1C
105
V
ES1D
140
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 120 °C; see Fig.2
1A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
Tj =25 °C prior to surge;
VR =VRRMmax
25
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
See Fig.3
−65
+175
°C


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