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K6F1616U6A Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K6F1616U6A
Description  1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Download  9 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6F1616U6A Datasheet(HTML) 6 Page - Samsung semiconductor

   
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K6F1616U6A Family
Revision 1.1
September 2002
6
CMOS SRAM
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
tRC
CS1
Address
UB, LB
OE
Data out
tAA
tRC
tOH
tOH
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tOHZ
tBHZ
tHZ
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
CS2


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