PML260SN_2

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 02 — 29 May 2006

6 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab063

0

4

8

12

01

23

45

(A)

5

4

3.8

3.6

3.4

3.2

003aab064

0

200

400

600

800

048

12

(m

Ω)

5

3.8

3.6

4

10

003aab065

0

4

8

12

012

345

(A)

25

°C

03al52

0

1

2

3

-60

0

60

120

180

a

a

R

DSon

R

DSon 25

°C

()

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=