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PHP36N03LT Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHP36N03LT Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PHD_PHP36N03LT_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 8 June 2006 5 of 13 Philips Semiconductors PHD/PHP36N03LT N-channel TrenchMOS logic level FET 6. Characteristics Table 5. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V Tj =25 °C 30 --V Tj = −55 °C 27 --V VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS; see Figure 9 and 10 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.2 V IDSS drain leakage current VDS =24V; VGS =0V Tj =25 °C - 0.05 1 µA Tj = 175 °C - - 500 µA IGSS gate leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 12 A; see Figure 6 and 8 Tj =25 °C - 18 22 m Ω Tj = 175 °C - 32.4 39.6 m Ω VGS = 10 V; ID = 25 A; see Figure 6 and 8 - 1417m Ω VGS = 3.5 V; ID = 5.2 A; see Figure 6 and 8 - 2240m Ω Dynamic characteristics QG(tot) total gate charge ID = 36 A; VDS =15V; VGS =10V; see Figure 11 and 12 - 18.5 - nC QGS gate-source charge - 4.2 - nC QGD gate-drain charge - 2.9 - nC Ciss input capacitance VGS =0V; VDS = 25 V; f = 1 MHz; see Figure 14 - 690 - pF Coss output capacitance - 160 - pF Crss reverse transfer capacitance - 110 - pF td(on) turn-on delay time VDS =15V; RL = 0.6 Ω; VGS =10V; RG =10 Ω -6 -ns tr rise time -10 - ns td(off) turn-off delay time - 33 - ns tf fall time -19 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 13 - 0.97 1.2 V |
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