HAT3010R datasheet(6/16 Pages) RENESAS

Part #	HAT3010R

Description	Silicon N/P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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6 / 16 page

HAT3010R

Rev.8, Aug. 2002, page 4 of 14

• P Channel

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

–60

—

V

I

D = –10 mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

—

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

—

±10

µA

V

GS = ±16 V, VDS = 0

Zero gate voltage drain current

I

DSS

—

–1

µA

V

DS = –60 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

–1.0

—

–2.5

V

DS = –10 V, I D = –1 mA

Static drain to source on state

R

DS(on)

—

60

76

m

Ω

I

D = –2.5 A, VGS = –10 V

Note5

resistance

R

DS(on)

—

90

130

m

Ω

I

D = –2.5 A, VGS = – 4.5 V

Note5

Forward transfer admittance

|y

fs|

3

5

—

S

I

D = –2.5 A, VDS = –10 V

Note5

Input capacitance

Ciss

—

1350

—

pF

V

DS = –10 V

Output capacitance

Coss

—

135

—

pF

V

GS = 0

Reverse transfer capacitance

Crss

—

85

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

20

—

ns

V

GS = –10 V, ID = –2.5 A

Rise time

t

r

—

15

—

ns

V

DD ≈ –30 V

Turn-off delay time

t

d(off)

—

55

—

ns

R

L = 12 Ω

Fall time

t

f

—

10

—

ns

R

g = 4.7 Ω

Body–drain diode forward voltage V

DF

—

-0.85

-1.10

V

IF = –5 A, V

GS = 0

Note5

Body–drain diode reverse

recovery time

t

rr

—

50

—

ns

IF = –5 A, V

GS = 0

diF/ dt = 100 A/µs

Notes: 5. Pulse test

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