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HAT3010R Datasheet(PDF) 6 Page - Renesas Technology Corp

Part No. HAT3010R
Description  Silicon N/P Channel Power MOS FET High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT3010R Datasheet(HTML) 6 Page - Renesas Technology Corp

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HAT3010R
Rev.8, Aug. 2002, page 4 of 14
• P Channel
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
±10
µA
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current
I
DSS
–1
µA
V
DS = –60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.5
V
V
DS = –10 V, I D = –1 mA
Static drain to source on state
R
DS(on)
60
76
m
I
D = –2.5 A, VGS = –10 V
Note5
resistance
R
DS(on)
90
130
m
I
D = –2.5 A, VGS = – 4.5 V
Note5
Forward transfer admittance
|y
fs|
3
5
S
I
D = –2.5 A, VDS = –10 V
Note5
Input capacitance
Ciss
1350
pF
V
DS = –10 V
Output capacitance
Coss
135
pF
V
GS = 0
Reverse transfer capacitance
Crss
85
pF
f = 1 MHz
Turn-on delay time
t
d(on)
20
ns
V
GS = –10 V, ID = –2.5 A
Rise time
t
r
15
ns
V
DD ≈ –30 V
Turn-off delay time
t
d(off)
55
ns
R
L = 12 Ω
Fall time
t
f
10
ns
R
g = 4.7 Ω
Body–drain diode forward voltage V
DF
-0.85
-1.10
V
IF = –5 A, V
GS = 0
Note5
Body–drain diode reverse
recovery time
t
rr
50
ns
IF = –5 A, V
GS = 0
diF/ dt = 100 A/µs
Notes: 5. Pulse test


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