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HAT3010R Datasheet(PDF) 6 Page - Renesas Technology Corp |
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HAT3010R Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 16 page 
HAT3010R Rev.8, Aug. 2002, page 4 of 14 • P Channel Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS –60 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA V GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –1 µA V DS = –60 V, VGS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.5 V V DS = –10 V, I D = –1 mA Static drain to source on state R DS(on) — 60 76 m Ω I D = –2.5 A, VGS = –10 V Note5 resistance R DS(on) — 90 130 m Ω I D = –2.5 A, VGS = – 4.5 V Note5 Forward transfer admittance |y fs| 3 5 — S I D = –2.5 A, VDS = –10 V Note5 Input capacitance Ciss — 1350 — pF V DS = –10 V Output capacitance Coss — 135 — pF V GS = 0 Reverse transfer capacitance Crss — 85 — pF f = 1 MHz Turn-on delay time t d(on) — 20 — ns V GS = –10 V, ID = –2.5 A Rise time t r — 15 — ns V DD ≈ –30 V Turn-off delay time t d(off) — 55 — ns R L = 12 Ω Fall time t f — 10 — ns R g = 4.7 Ω Body–drain diode forward voltage V DF — -0.85 -1.10 V IF = –5 A, V GS = 0 Note5 Body–drain diode reverse recovery time t rr — 50 — ns IF = –5 A, V GS = 0 diF/ dt = 100 A/µs Notes: 5. Pulse test |
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