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HAT3010R Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. HAT3010R
Description  Silicon N/P Channel Power MOS FET High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT3010R Datasheet(HTML) 5 Page - Renesas Technology Corp

 
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HAT3010R
Rev.8, Aug. 2002, page 3 of 14
Electrical Characteristics (Ta = 25°C)
• N Channel
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
V
I
D = 10 mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
±10
µA
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current
I
DSS
1
µA
V
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
V
DS = 10 V, I D = 1 mA
Static drain to source on state
R
DS(on)
25
32
m
I
D = 3 A, VGS = 10 V
Note4
resistance
R
DS(on)
32
45
m
I
D = 3 A, VGS = 4.5 V
Note4
Forward transfer admittance
|y
fs|
7
11
S
I
D = 3 A, VDS = 10 V
Note4
Input capacitance
Ciss
1050
pF
V
DS = 10 V
Output capacitance
Coss
150
pF
V
GS = 0
Reverse transfer capacitance
Crss
90
pF
f = 1 MHz
Turn-on delay time
t
d(on)
15
ns
V
GS = 10 V, ID = 3 A
Rise time
t
r
15
ns
V
DD ≈ 30 V
Turn-off delay time
t
d(off)
55
ns
R
L = 10 Ω
Fall time
t
f
10
ns
R
g = 4.7 Ω
Body–drain diode forward voltage
V
DF
0.85
1.10
V
IF = 6 A, V
GS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
50
ns
IF =6 A, V
GS = 0
diF/ dt =100 A/µs
Notes: 4. Pulse test


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