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HAT3010R Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT3010R Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 16 page 
HAT3010R Rev.8, Aug. 2002, page 2 of 14 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Nch Pch Drain to source voltage V DSS 60 –60 V Gate to source voltage V GSS ±20 ±20 V Drain current I D 6 –5 A Drain peak current I D(pulse) Note1 48 –40 A Body-drain diode reverse drain current I DR 6 –5 A Channel dissipation Pch Note2 2 2 W Channel dissipation Pch Note3 3 3 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s |
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