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2SD2402 Datasheet(PDF) 1 Page - NEC

Part No. 2SD2402
Description  NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SD2402 Datasheet(HTML) 1 Page - NEC

   
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1998
©
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The
2SD2402
is
a
transistor
featuring
high
current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
8.0
A
Base current (DC)
IB(DC)
0.2
A
Base current (pulse)
IB(pulse)
PW
≤ 10 ms
duty cycle
≤ 50 %
0.4
A
Total power dissipation
PT
16 cm
2
× 0.7 mm ceramic board mounted
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C


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