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M63826P Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. M63826P
Description  7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M63826P Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63826GP)
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63826GP)
Duty cycle (%)
Collector current IcC (mA)
Grounded Emitter Transfer Characteristics
DC Amplification Factor
Collector Current Characteristics
Input voltage VI (V)
Input Characteristics
Input voltage VI (V)
Clamping Diode Characteristics
Forward bias voltage VF (V)
1
2
3
4
5
6
7
0
100
20
40
60
80
500
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
6
7
101
102
103
102
103
104
2
3
57
2
3
57
2
3
5
7
2
3
5
7
0
1
234
5
05
10
20
15
25
0
0.5
1.0
1.5
2.0
500
400
300
200
100
0
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the
value of the simultaneously-operated circuit.
Ta = 25
°C
500
400
300
200
100
0
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit. Ta = 85
°C
0
400
300
200
100
0
500
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
4
3
2
1
0
Ta = –40
°C
Ta = 85
°C
Ta = 25
°C
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
VCE = 4V
Ta = 85
°C
Ta = –40
°C
Ta= 25
°C


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