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M63826P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M63826P
Description  7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M63826P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10
µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 8VP-P
(2)Input-output conditions : RL = 25
Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
PG
50
RL
OUTPUT
INPUT
Vo
CL
OPEN
Measured device
Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
15
350
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V
Parameter
0
Limits
min
typ
max
Symbol
Unit
VO
Output voltage
“H” input voltage
“L” input voltage
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
IC
VIL
VIH
0
0
5
0
50
400
200
25
0.5
mA
V
V
1.2
1.0
0.9
0.9
1.4
2500
50
1000
V (BR) CEO
II
VF
IR
hFE
V
V
mA
V
µA
1.6
1.3
1.1
1.4
2.0
100
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 100
µA
II = 500
µA, IC = 350mA
II = 350
µA, IC = 200mA
II = 250
µA, IC = 100mA
VI = 10V
IF = 350mA
VR = 50V
VCE = 4V, IC = 350mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)


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