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IXTP02N50D Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTP02N50D Datasheet(HTML) 1 Page - IXYS Corporation |
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Symbol Test Conditions Maximum Ratings V DSX T J = 25°C to 150°C 500 V V DGX T J = 25°C to 150°C 500 V V GS Continuous ± 20 V V GSM Transient ± 30 V I DSS T C = 25°C; TJ = 25°C to 150°C 200 mA I DM T C = 25°C, pulse width limited by TJ 800 mA P D T C = 25°C 25 W T A = 25°C 1.1 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in.) from case for 10 s 300 °C T ISOL Plastic case for 10 s (IXTU) 300 °C M d Mounting torque TO-220 1.3 / 10 Nm/lb. Weight TO-220 4 g TO-251 0.8 g TO-252 0.8 g High Voltage MOSFET © 2006 IXYS All rights reserved N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D V DSS = 500 V I D25 = 200 mA R DS(on) = 30 Ω Ω Ω Ω Ω Features Normally ON mode Low R DS (on) HDMOS TM process Rugged polysilicon gate cell structure Fast switching speed Applications Level shifting Triggers Solid state relays Current regulators 98861A (01/06) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSX V GS = -10 V, I D = 25 μA 500 V V GS(off) V DS = 25V, I D = 25 μA -2.5 -5 V I GSS V GS = ± 20 V DC, VDS = 0 ±100 nA I DSX(off) V DS = V DSS, VGS = -10 V 10 μA T J = 125°C 250 μA R DS(on) V GS = 0 V, I D = 50 mA Note 1 20 30 Ω I D(on) V GS = 0 V, VDS = 25V Note 1 250 mA Preliminary Data Sheet G D S TO-220 (IXTP) Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain D (TAB) TO-251 (IXTU) D S G D (TAB) TO-252 (IXTY) G S D (TAB) |
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