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HVU145 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HVU145 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page  HVU145 Rev.1, Jun. 2002, page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage V R 60 V Forward current I F 50 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current I R — — 100 nA V R = 60 V Forward voltage V F ——0.9 V I F = 2 mA Capacitance C — — 0.45 pF V R = 1 V, f = 1 MHz Forward resistance r f ——1.8 Ω I F = 10 mA, f = 100 MHz ESD-Capability * 1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Note : 1. Failure criterion ; I R ≥ 100 nA at VR = 60 V |
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