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HM6208H Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part No. HM6208H
Description  65,536-word ´ 4-bit High Speed CMOS Static RAM
Download  11 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HM6208H Datasheet(HTML) 4 Page - Hitachi Semiconductor

 
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HM6208H Series
4
Recommended DC Operating Conditions (Ta = 0 to +70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
V
SS
000
V
Input high (logic 1) voltage
V
IH
2.2
6.0
V
Input low (logic 0) voltage
V
IL
–0.5
*1
0.8
V
Note:
1. V
IL min = –2.0 V for pulse width ≤ 10 ns.
DC Characteristics (Ta = 0 to +70
°C, V
CC = 5 V ± 10%, VSS = 0 V)
HM6208H-25
HM6208H-35/45
Parameter
Symbol Min
Typ
*2
Max Min
Typ
*2
Max Unit Test Conditions
Input leakage current
I
LI
2.0
2.0
µAV
CC = Max
Vin = V
SS to V CC
Output leakage current
I
LO
10.0 —
10.0
µA
CS = V
IH, VIO
= V
SS to V CC
Operating power supply
current
I
CC
60
120 —
50
100 mA
CS = V
IL, I I/O = 0 mA,
min cycle,
duty = 100%
I
CC1
40
80
40
80
mA
CS = V
IL, II/O = 0 mA,
t cycle = 50 ns,
duty = 100%
Standby power supply current
ISB
20
40
15
30
mA
CS = V
IH, min cycle
Standby power supply current
(1)
ISB1
0.02
2.0
0.02
2.0
CS
≥ V
CC – 0.2 V,
0 V
≤ Vin < 0.2 V, or
Vin
≥ V
CC – 0.2 V
ISB1
*1
0.006 0.1
*1
0.006 0.1
*1
Output low voltage
V
OL
0.4
0.4
V
I
OL = 8 mA
Output high voltage
V
OH
2.4
2.4
V
I
OH = –4.0 mA
Notes: 1. L-version
2. Typical values are at V
CC = 5.0 V, Ta = +25°C and not guaranteed.
Capacitance (Ta = 25
°C, f = 1 MHz)*1
Parameter
Symbol
Min
Max
Unit
Test Conditions
Input capacitance
Cin
6
pF
Vin = 0 V
Input/output capacitance
C
I/O
—11pF
V
I/O = 0 V
Note:
1. These parameters are sampled and not 100% tested.


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